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5th
BelarussianRussian Workshop
SEMICONDUCTOR LASERS AND SYSTEMS
15 June 2005,
Minsk, Belarus
PROGRAMME
(Preliminary)
(download as an Adobe Acrobat file)
1 June,
Wednesday
8.00-18.00 Registration, meeting and visiting to
the Laboratory of Physics and Technique of Semiconductors at Stepanov
Institute of Physics NASB, excursion around Minsk.
18.00 Welcome Party
2 June, Thursday
9.00 Workshop Opening
J. I. Alferov. Introductory address.
9.30 Invited paper
Indium nitride: between amorphous and metal/semiconductor nano-composite
materials.
P. S. ˮp'ev
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
10.00 Invited paper
High-intensity semiconductor lasers with an angled phase grating
in the cavity.
A. P. Bogatov
Lebedev Physical Institute RAS, Moscow, Russia
10.3011.00 Coffee Break
Session: Injection Lasers
11.00 Invited paper
Injection lasers and photodetectors for the mid- and far-IR diapason.
Yu. P. Yakovlev
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
11.25 Invited paper
Scalar and vectorial optical approaches to VCSEL simulations.
T. Czyszanowski ,
, W. Nakwaski
Institute of Physics,
Technical University of Lodz', Lodz', Poland
CFD Research Corporation,
Alabama, USA
11.50 Nonlinear gain spectra in quantum-well laser
heterostructures.
V. K. Kononenko
Stepanov Institute of Physics NASB, Minsk, Belarus
12.05
To be announced.
G. I. Ryabtsev
Stepanov Institute of Physics NASB, Minsk, Belarus
12.20 Generation of the difference frequency of
the mid- and far-IR diapason in asymmetric quantum-well heterolasers.
V. Ya. Aleshkin,
ힿ ힿ ힿonenko, ힿ ힿ
Dubinov
Institute of Microstructure
Physics RAS, N. Novgorod, Russia
BSU, Minsk, Belarus
12.35 Influence of non-radiative recombination
on thermal properties of InAs/GaAs quantum dot lasers.
I. P. Marko, 4,
A. R. Adams, S. J. Sweeney,
I. R. Sellers, D. J. Mowbray,
M. S. Skolnick, H. Y.
Liu, K. M. Groom
Advanced Technology Institute,
University of Surrey, Guildford, Surrey, UK
Department of Physics
and Astronomy, University of Sheffield, Sheffield, UK
EPSRC National Centre
for III-V Technologies, Department of Electrical and Electronic
Engineering, University of Sheffield, UK
Stepanov Institute of
Physics NASB, Minsk, Belarus
12.50 Study of parameters of quantum-well lasers
with different barrier height in the AlGaInAs/InP system.
ힿ Yu. ힿdreev, ힿ V. Ivanov, V. D. ɵrnosov, Ȯ V. ɵrnosov,
ힿ ힿ ͠rmalyuk, V. I. Romantcevich, Yu. ힿ Ryaboshtan, R. V. Chernov
FGUP Stel'makh NII "Polyus", Moscow, Russia
13.05 To be announced.
G. I. Ryabtsev
Stepanov Institute of Physics NASB, Minsk, Belarus
13.2015.00 Lunch
15.00 Invited paper
Novel developments of serial semiconductor sources.
G. Ю ˩kaelyan, S. N. Sokolov, S. ힿ Sosnovskii
FGUP NPP Inject, Saratov, Russia
15.25 Invited paper
Powerful matrixes of laser diodes with the impulse long duration.
V. G. Volkov, B. V. Gratca, ힿ D. Dub, ힿ P. Maiorov, S.
B. Sevastyanov
NPO Sever, Novosibirsk, Russia
15.50 Tuning up of the radiation wavelength of
laser heterostructures with a super-narrow quantum well by the post-growing
treatment method.
V. G. Volkov, B. V. Gratca, ힿ D. Dub, ힿ P. Maiorov, S.
B. Sevastyanov
NPO Sever, Novosibirsk, Russia
16.05 Factors limiting the lifetime of powerful
laser diodes of the 808-nm spectral diapason at operation in a non-hermetic
body.
V. V. Bezotosnui
Lebedev Physical Institute RAS, Moscow, Russia
16.20 Study of parameters of quantum-well lasers
at impulse and continuous injection of the pump current.
ힿ V. Ivanov, V. D. ɵrnosov, Ȯ V. ɵrnosov, R. V. Chernov
FGUP Stel'makh NII "Polyus", Moscow, Russia
16.35 Acousto-optical modulator as an external
phase modulator in FM sideband diode laser stabilization technique.
V. N. Barychev, S. S. Kurlenkov
Institute for Metrology of Time and Space FGUP "VNIIFTRI",
Mendeleevo, Russia
FGUP Stel'makh NII "Polyus", Moscow, Russia
16.50 Peculiarities of a microsphere cavity for
ultralow threshold laser using a single quantum dot.
H. P. Ledneva, L. G. Astafyeva
Stepanov Institute of Physics NASB, Minsk, Belarus
17.05 Monte Carlo simulations of terahertz radiation
from pin structures.
V. L. Malevich
Stepanov Institute of Physics NASB, Minsk, Belarus
17.2017.50 Coffee Break
AIXTRON seminar
17.50 Invited paper
GaN based optoelectronics: Physics, technology and market perspectives.
M. Heuken AIXTRON AG, Aachen, Germany.
18.20 Recombination and gain mechanisms in InGaN/GaN
multiple quantum well heterostructures grown on sapphire and silicon.
V. Z. Zubialevich, E. V. Lutsenko,
V. N. Pavlovskii , A. L. Gurskii 1, G. P. Yablonskii,
M. B. Danailov, B. Ressel,
H. Kalisch, Y. Dikme,
R. A. Jansen, M. Lunenburger, B. Schineller, M. Heuken
Stepanov Institute of Physics NASB, Minsk, Belarus
Laser Lab., Sincrotrone Trieste, Trieste, Italy
Institut fur Theoretische Elektrotechnik RWTH, Aachen, Germany
18.35 Carrier diffusion length measured by optical
methods in GaN epilayers grown by MOCVD on sapphire substrates
V. N. Pavlovskii et al, K. Jarasiunas et al.
18.50 Optical and laser properties of GaN epitaxial
layers and InGaN/GaN grown on silicon.
Lutsenko et al.
19.00 AIXTRON party
3 June, Friday
Session: Semiconductor Light Emitters, Materials and Technologies
9.00 Invited paper
InSb quantum dot nanostructures for mid-IR lasers.
V. A. Solov'ev, A. N. Semenov, B. Ya. Meltser, O. G. Lyublinskaya,
Ya. V. Terent'ev, S. V. Ivanov, P. S. Kop'ev
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
9.25 Invited paper
Between LEDs and LDs: Superluminescent diodes.
S. D. Yakubovich
SuperlumDiodes Ltd., Moscow, Russia
9.50 Study of the system superluminescence diodesemiconductor
laser amplifier of the 1300 nm spectral diapason.
V. V. Prokhorov, D. S. Shvakov, S. D. Yakubovich
SuperlumDiodes Ltd., Moscow, Russia
10.05 Dynamic array element of feedback in diode
lasers.
S. ʮ Nekorkin, ̮ L. ힿtipov, S. N. Lobanov
Scientific Research Physical and Technical Institute NNSU, N.
Novgorod, Russia
Institute of Applied Physics RAS, N. Novgorod, Russia
10.20 Parametric optimization of Bragg reflectors
of a vertically-emitting laser of the mid part of the infrared diapson
Yu. ힿ ͮrozov, I. S. Nefedov, V. Ya. Aleshkin, ʮ
Yu. ͮrozov
Institute of Radiotechnique and Electronics RAS (Saratov Department),
Saratov, Russia
Institute of Microstructure Physics RAS, N. Novgorod, Russia
Saratov State Unoiversity, Saratov, Russia
10.35 Generation of the sum harmonic in the InGaP/GaAs/InGaAs
two-chip semiconductor lasers with a composite cavity.
S. V ͮrozov 1, V. Ya. Aleshkin 1, B. N. Zvonkov 2, N. B.
Zvonkov 2, V. I. Gavrilenko 1, S. ʮ Nekorkin 2, K. V. ͠remyanin
1, Vl. V Karovskii 3, A. ힿ Biryukov 4
1 Institute of Microstructure Physics RAS, N. Novgorod, Russia
2 Scientific Research Physical and Technical Institute NNSU, N.
Novgorod, Russia
3 Institute of Applied Physics RAS, N. Novgorod, Russia
4 Physics Department and Institute for Quantum Studies, Texas A&M
University, College Station, USA
10.50 Optical spectroscopy of InN layers and powders.
A. V. Mudryi
Institute of Solid State and Semiconductor Physics NASB, Minsk,
Belarus
11.05 11.30 Coffee Break
11.30 Invited paper
Lasers with resonance and periodic amplification.
V. I. ˮzlovsky
Lebedev Physical Institute RAS, Moscow, Russia
11.55 Invited paper
Lasers with electron-beam pump based on semiconductor heterostructures.
ʮ ʮ Zverev, S. V. Ivanov, I. ʮ ͬikhov
MIREA, Moscow, Russia
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
NPP "Gamma", Fryazino, Russia
12.20 Study of the radiation far-field pattern
of lasers based on ZnSe-containing heterostructures with optical
and electron pumps.
ʮ ʮ Zverev, N. ힿ Gamov,
ힿ F. Glova, î V. Jdanova,
S. V. Ivanov, ힿ Yu. Lusikov,
D. V. Peregudov, I. V. Sedova,
S. V. Sorokin, V. B. Studenov,
P. S. ˮp'ev
MIREA, Moscow, Russia
TRINITI, Troitck, Russia
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
12.35 Role of lithium at the formation of optical
and electrophysical properties of zinc oxide.
V. ힿ Nikitenko, S. V. ˵khin, I. V. Pukanov. Moscow
State University of Communications, Moscow, Russia
Stepanov Institute of Physics NASB, Minsk, Belarus
12.50 Control of whispering gallery modes in the
system of two interaction microcavities.
ힿ ힿ Gladushyk, Ȯ I. Rusakov, Yu. P. Rakovich, S. V. Chugunov
Brest State Technical University, Brest, Belarus
13.05 Optical and laser properties of heterostructures
with CdSe quantum dots in ZnSe matrix.
E. V. Lutsenko, A. G. Voinilovich, A.V. Danilchyk, V.
N. Pavlovskii V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii,
I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov
S. V. Ivanov P. S. Kopev
Stepanov Institute of Physics NASB, Minsk, Belarus
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
13.3014.30 Coffee Break
14.30 Discussions.
Excursion at the Folklore Museum Dudutki, Dinner
4 June, Saturday
Session: Applications of Semiconductor Light Emitters
9.00 Invited paper
Modern fiber optical communication network. Problems and state in
Russia and abroad.
V. P. Duraev
FGUP Stel'makh NII "Polyus", Moscow, Russia
9.25 Invited paper
Analytical applications of diode lasers.
ힿ I. Nadejzdinskii
Prokhorov Institute of Applied Physics RAS, Moscow, Russia
9.50 Low-coherent light sources of high brightness
based on the superposition of radiation of superluminescence diodes.
M. Wojtkovski P. I. Lapin, D. S. ˡmedov, J. G. Fujimoto
, S. D. Yakubovich
Department of Electrical Engineering and Computer Science and
Research Laboratory of Electronics, Massachusetts Institute of Technology,
Cambridge, USA
SuperlumDiodes Ltd., Moscow, Russia
10.05 Lifetime tests of superluminescence diodes
and light-emitting modules based on them.
P. ힿ Lobintsov, D. S. ˡmedov, S. D. Yakubovich
SuperlumDiodes Ltd., Moscow, Russia
10.20 High-power blue InGaN flip-chip LEDs with
reflecting contacts
Lundin W.V., Sakharov A.V., Tsatsulnikov A.F., Onushkin
G.A., Zakgeim D.A., Smirnova I.P., Gurevich S.A., Zakgeim A.L., Vasileva E.D.,
Itkinson G.V.
A.F.Ioffe Physico-Technical Institute RAS
Center for microelectronics in A.F.Ioffe Physico-Technical Institute
ZAO Svetlana-Optoelectronics
10.35 UV light souses grown by HVPE.
A.S. Usikov et al.
TDI Inc., MD, USA
11.0011.30
Coffee Break
11.30 Invited paper
Microchip and mini lasers with intracavity Raman conversion.
V. A. Orlovich, A. S. Grabtchikov, A. A. Demidovich , V. A. Lisinetskii
Stepanov Institute of Physics NASB, Minsk, Belarus
Institute of Molecular and Atomic Physics NASB, Minsk, Belarus
11.55 Invited paper
Solid-state laser with diode pump of the power of 300 W.
I. V. Glukhikh, S. S. Polikarpov, ힿ V. Stepanov, S. V.
Frolov
FGUP Efremov NIIEFA, St. Petersburg, Russia
12.20 Invited paper
Modern photo-therapeutic apparatuses and technologies based on application
of semiconductor lasers and light-emitting diodes.
V. ힿ ͮstovnikov, G. R. ͮstovnikova,
V. Yu. Plavskii , ힿ B. Ryabtsev,
I. ힿ Leusenko, ힿ V. ͮstovnikov,
N. S. Serdyuchenko, V. S. Ulashik,
P. S. Rusakevich, I. ힿ Ruibin,
ힿ L. Novakovskii, î ힿ Lositskii
Stepanov Institute of Physics NASB, Minsk, Belarus
Belarussian State Medicine University, Minsk, Belarus
Belarussian Medicine Academy of Postgraduate Education, Minsk,
Belarus
ine, Minsk, Belarus
12.35 Reserved.
13.00 Workshop Closing
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