Workshop address:
Stepanov Institute of Physics, National Academy of Sciences of Belarus, F.Skaryna Ave. 68, 220072 Minsk, Belarus
phone: 375 17 2840428
fax: 375 17 2840879
e-mail: yablon@dragon.bas-net.by
(G. P. Yablonskii)

Organization:
phone: 375 17 2840398
e-mail: semorg@dragon.bas-net.by
(G. I. Ryabtsev )

Program and publication:
phone: 375 17 2840435
e-mail: prokon@dragon.bas-net.by
(V. K. Kononenko )

5th Belarussian-Russian Workshop
SEMICONDUCTOR LASERS
AND
SYSTEMS


will take place at Stepanov Institute of Physics
of National Academy of Sciences, Belarus

15 June 2005, Minsk, Belarus

 

The Workshop technical program will consist of review papers and contributed oral reports in a wide range of topics on physics and techniques of semiconductor lasers, including injection lasers, electron-beam and optical pumped lasers, other types of semiconductor lasers and sources of radiation, technology of semiconductor structures and lasers, applications of lasers.

The working languages of the Workshop will be Russian & English.
The time schedule of the Workshop:

1 June 2005 arrival, registration, city excursion, meetings in laboratory of physics and technique of semiconductors of Stepanov Institute of Physics, welcome party.
2 June 2005 opening of Workshop, 1st and 2nd oral sessions. AIXTRON Seminar.
3 June 2005 3rd oral session. Excursion outside Minsk (50 km) to a private complex of the folklore museums Dudutki.

4 June 2005 4th oral session, closing of Workshop. Excursions.
5 June 2005 departure.


Exhibitions on semiconductor lasers, light-emitting devices and technology are planned.
A tour of the city Minsk and trips to other famous places of Belarus will be made.

Important Dates
Post Deadline Application Due Date is 28 February 2005. Paper title, author list, institutions and addresses for participation in the Workshop are requested to be sent to G. P. Yablonskii via
e- mail address yablon@dragon.bas-net.by.
Manuscript Due Date is 30 March 2005. Manuscripts of submitted and accepted for presentation at the Workshop papers will be published in the Book of Papers that will be available at the registration desk. Instruction for the preparing of the camera-ready manuscripts for the proceedings of the BelarussianRussian Workshop can be found at the web site as the archived Microsoft Word document (sample.zip). Texts of the prepared papers (4 full pages) are requested to be sent to V. K. Kononenko via e-mail address prokon@dragon.bas-net.by.
Registration form Due Date is 30 March 2005 and it is requested to be sent to G. I. Ryabtsev via e-mail address semorg@dragon.bas-net.by.
Invitations will be sent to all participants after receiving the registration forms and manuscripts.

Scientific Committee:

Co-Chairs: Zh. I. Alferov (Ioffe Physical and Technical Institute RAS, St. Petersburg) & N.S.Kazak   (Stepanov Institute of Physics NASB, Minsk).
Co-Vice-Chairs: P. S. Kopev (St. Petersburg) & G. P. Yablonskii (Minsk).
Organization (invitations, conference fee, lodging and transportation): G. I. Ryabtsev
(semorg@dragon.bas-net.by, phone: 375 17 2840398).
Programme and Workshop Paper Book: V. K. Kononenko.
(prokon@dragon.bas-net.by, phone: 375 17 2840435).

A. P. Bogatov (Moscow, Russia)

A. I. Nadezhdinskii (Moscow, Russia)

L. I. Burov (Minsk, Belarus)

V. Nakwaski (Lodz, Poland)

V. P. Duraev (Moscow, Russia)

V. A. Orlovich (Minsk, Belarus)

A. L. Gurskii (Minsk, Belarus)

A. P. Shkadarevich (Minsk, Belarus)

M. Heuken (Aachen, Germany)

V. G. Sidorov (St. Petersburg, Russia)

S. V. Ivanov (St. Petersburg, Russia)

S. A. Sosnovskii (Saratov, Russia)

V. I. Kozlovskii (Moscow, Russia)

S. B. Sevastyanov (Novosibirsk, Russia)

V. D. Kurnosov (Moscow, Russia)

Yu. P. Yakovlev (St. Petersburg, Russia)

E. V. Lutsenko (Minsk, Belarus)

S. D. Yakubovich (Moscow, Russia)

 

M. M. Zverev (Moscow, Russia)



Workshop address:

G. P. Yablonskii. Stepanov Institute of Physics, National Academy of Sciences of Belarus, F.Skaryna Ave., 68, 220072 Minsk, Belarus, phone: 375 17 2840428, fax: 375 17 2840879, e-mail: yablon@dragon.bas-net.by.


Workshop web site:

http://www.semiconductor-lasers-and-systems.by

Conferences and Workshops

5th BelarussianRussian Workshop
SEMICONDUCTOR LASERS AND SYSTEMS

15 June 2005, Minsk, Belarus

PROGRAMME (Preliminary)
(download as an Adobe Acrobat file)


1 June, Wednesday

8.00-18.00 Registration, meeting and visiting to the Laboratory of Physics and Technique of Semiconductors at Stepanov Institute of Physics NASB, excursion around Minsk.
18.00 Welcome Party

2 June, Thursday

9.00 Workshop Opening
J. I. Alferov. Introductory address.
9.30 Invited paper
Indium nitride: between amorphous and metal/semiconductor nano-composite materials.
P. S. ˮp'ev
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
10.00 Invited paper
High-intensity semiconductor lasers with an angled phase grating in the cavity.
A. P. Bogatov
Lebedev Physical Institute RAS, Moscow, Russia

10.3011.00 Coffee Break

Session: Injection Lasers

11.00 Invited paper
Injection lasers and photodetectors for the mid- and far-IR diapason.
Yu. P. Yakovlev
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
11.25 Invited paper
Scalar and vectorial optical approaches to VCSEL simulations.
T. Czyszanowski , , W. Nakwaski
Institute of Physics, Technical University of Lodz', Lodz', Poland
CFD Research Corporation, Alabama, USA
11.50 Nonlinear gain spectra in quantum-well laser heterostructures.
V. K. Kononenko
Stepanov Institute of Physics NASB, Minsk, Belarus
12.05 To be announced.
G. I. Ryabtsev
Stepanov Institute of Physics NASB, Minsk, Belarus
12.20 Generation of the difference frequency of the mid- and far-IR diapason in asymmetric quantum-well heterolasers.
V. Ya. Aleshkin, ힿ ힿ ힿonenko, ힿ ힿ Dubinov
Institute of Microstructure Physics RAS, N. Novgorod, Russia
BSU, Minsk, Belarus
12.35 Influence of non-radiative recombination on thermal properties of InAs/GaAs quantum dot lasers.
I. P. Marko, 4, A. R. Adams, S. J. Sweeney, I. R. Sellers, D. J. Mowbray, M. S. Skolnick, H. Y. Liu, K. M. Groom
Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK
Department of Physics and Astronomy, University of Sheffield, Sheffield, UK
EPSRC National Centre for III-V Technologies, Department of Electrical and Electronic Engineering, University of Sheffield, UK
Stepanov Institute of Physics NASB, Minsk, Belarus
12.50 Study of parameters of quantum-well lasers with different barrier height in the AlGaInAs/InP system.
ힿ Yu. ힿdreev, ힿ V. Ivanov, V. D. ɵrnosov, Ȯ V. ɵrnosov, ힿ ힿ ͠rmalyuk, V. I. Romantcevich, Yu. ힿ Ryaboshtan, R. V. Chernov
FGUP Stel'makh NII "Polyus", Moscow, Russia
13.05 To be announced.
G. I. Ryabtsev
Stepanov Institute of Physics NASB, Minsk, Belarus

13.2015.00 Lunch

15.00 Invited paper
Novel developments of serial semiconductor sources.
G. Ю ˩kaelyan, S. N. Sokolov, S. ힿ Sosnovskii
FGUP NPP Inject, Saratov, Russia
15.25 Invited paper
Powerful matrixes of laser diodes with the impulse long duration.
V. G. Volkov, B. V. Gratca, ힿ D. Dub, ힿ P. Maiorov, S. B. Sevastyanov
NPO Sever, Novosibirsk, Russia
15.50 Tuning up of the radiation wavelength of laser heterostructures with a super-narrow quantum well by the post-growing treatment method.
V. G. Volkov, B. V. Gratca, ힿ D. Dub, ힿ P. Maiorov, S. B. Sevastyanov
NPO Sever, Novosibirsk, Russia
16.05 Factors limiting the lifetime of powerful laser diodes of the 808-nm spectral diapason at operation in a non-hermetic body.
V. V. Bezotosnui
Lebedev Physical Institute RAS, Moscow, Russia
16.20 Study of parameters of quantum-well lasers at impulse and continuous injection of the pump current.
ힿ V. Ivanov, V. D. ɵrnosov, Ȯ V. ɵrnosov, R. V. Chernov
FGUP Stel'makh NII "Polyus", Moscow, Russia
16.35 Acousto-optical modulator as an external phase modulator in FM sideband diode laser stabilization technique.
V. N. Barychev, S. S. Kurlenkov
Institute for Metrology of Time and Space FGUP "VNIIFTRI", Mendeleevo, Russia
FGUP Stel'makh NII "Polyus", Moscow, Russia
16.50 Peculiarities of a microsphere cavity for ultralow threshold laser using a single quantum dot.
H. P. Ledneva, L. G. Astafyeva
Stepanov Institute of Physics NASB, Minsk, Belarus
17.05 Monte Carlo simulations of terahertz radiation from pin structures.
V. L. Malevich
Stepanov Institute of Physics NASB, Minsk, Belarus

17.2017.50 Coffee Break

AIXTRON seminar

17.50 Invited paper
GaN based optoelectronics: Physics, technology and market perspectives.
M. Heuken
 AIXTRON AG, Aachen, Germany.
18.20 Recombination and gain mechanisms in InGaN/GaN multiple quantum well heterostructures grown on sapphire and silicon.
V. Z. Zubialevich, E. V. Lutsenko, V. N. Pavlovskii , A. L. Gurskii 1, G. P. Yablonskii, M. B. Danailov, B. Ressel, H. Kalisch, Y. Dikme,
R. A. Jansen, M. Lunenburger, B. Schineller, M. Heuken
Stepanov Institute of Physics NASB, Minsk, Belarus
Laser Lab., Sincrotrone Trieste, Trieste, Italy
Institut fur Theoretische Elektrotechnik RWTH, Aachen, Germany
18.35 Carrier diffusion length measured by optical methods in GaN epilayers grown by MOCVD on sapphire substrates
V. N. Pavlovskii et al, K. Jarasiunas et al.
18.50 Optical and laser properties of GaN epitaxial layers and InGaN/GaN grown on silicon.
Lutsenko et al.

19.00 AIXTRON party

3 June, Friday

Session: Semiconductor Light Emitters, Materials and Technologies

9.00 Invited paper
InSb quantum dot nanostructures for mid-IR lasers.
V. A. Solov'ev, A. N. Semenov, B. Ya. Meltser, O. G. Lyublinskaya, Ya. V. Terent'ev, S. V. Ivanov, P. S. Kop'ev
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
9.25 Invited paper
Between LEDs and LDs: Superluminescent diodes.
S. D. Yakubovich
SuperlumDiodes Ltd., Moscow, Russia
9.50 Study of the system superluminescence diodesemiconductor laser amplifier of the 1300 nm spectral diapason.
V. V. Prokhorov, D. S. Shvakov, S. D. Yakubovich
SuperlumDiodes Ltd., Moscow, Russia
10.05 Dynamic array element of feedback in diode lasers.
S. ʮ Nekorkin, ̮ L. ힿtipov, S. N. Lobanov
Scientific Research Physical and Technical Institute NNSU, N. Novgorod, Russia
Institute of Applied Physics RAS, N. Novgorod, Russia
10.20 Parametric optimization of Bragg reflectors of a vertically-emitting laser of the mid part of the infrared diapson
Yu. ힿ ͮrozov, I. S. Nefedov, V. Ya. Aleshkin, ʮ Yu. ͮrozov
Institute of Radiotechnique and Electronics RAS (Saratov Department), Saratov, Russia
Institute of Microstructure Physics RAS, N. Novgorod, Russia
Saratov State Unoiversity, Saratov, Russia
10.35 Generation of the sum harmonic in the InGaP/GaAs/InGaAs two-chip semiconductor lasers with a composite cavity.
S. V ͮrozov 1, V. Ya. Aleshkin 1, B. N. Zvonkov 2, N. B. Zvonkov 2, V. I. Gavrilenko 1, S. ʮ Nekorkin 2, K. V. ͠remyanin 1, Vl. V Karovskii 3, A. ힿ Biryukov 4
1 Institute of Microstructure Physics RAS, N. Novgorod, Russia
2 Scientific Research Physical and Technical Institute NNSU, N. Novgorod, Russia
3 Institute of Applied Physics RAS, N. Novgorod, Russia
4 Physics Department and Institute for Quantum Studies, Texas A&M University, College Station, USA
10.50 Optical spectroscopy of InN layers and powders.
A. V. Mudryi
Institute of Solid State and Semiconductor Physics NASB, Minsk, Belarus

11.05 11.30 Coffee Break

11.30 Invited paper
Lasers with resonance and periodic amplification.
V. I. ˮzlovsky
Lebedev Physical Institute RAS, Moscow, Russia
11.55 Invited paper
Lasers with electron-beam pump based on semiconductor heterostructures.
ʮ ʮ Zverev, S. V. Ivanov, I. ʮ ͬikhov
MIREA, Moscow, Russia
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
NPP "Gamma", Fryazino, Russia
12.20 Study of the radiation far-field pattern of lasers based on ZnSe-containing heterostructures with optical and electron pumps.
ʮ ʮ Zverev, N. ힿ Gamov, ힿ F. Glova, î V. Jdanova, S. V. Ivanov, ힿ Yu. Lusikov, D. V. Peregudov, I. V. Sedova, S. V. Sorokin, V. B. Studenov, P. S. ˮp'ev
MIREA, Moscow, Russia
TRINITI, Troitck, Russia
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia
12.35 Role of lithium at the formation of optical and electrophysical properties of zinc oxide.
V. ힿ Nikitenko, S. V. ˵khin, I. V. Pukanov. Moscow State University of Communications, Moscow, Russia
Stepanov Institute of Physics NASB, Minsk, Belarus
12.50 Control of whispering gallery modes in the system of two interaction microcavities.
ힿ ힿ Gladushyk, Ȯ I. Rusakov, Yu. P. Rakovich, S. V. Chugunov
Brest State Technical University, Brest, Belarus
13.05 Optical and laser properties of heterostructures with CdSe quantum dots in ZnSe matrix.
E. V. Lutsenko, A. G. Voinilovich, A.V. Danilchyk, V. N. Pavlovskii V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov S. V. Ivanov P. S. Kopev
Stepanov Institute of Physics NASB, Minsk, Belarus
Ioffe Physical and Technical Institute RAS, St. Petersburg, Russia

13.3014.30 Coffee Break

14.30 Discussions.

Excursion at the Folklore Museum Dudutki, Dinner
4 June, Saturday

Session: Applications of Semiconductor Light Emitters

9.00 Invited paper
Modern fiber optical communication network. Problems and state in Russia and abroad.
V. P. Duraev
FGUP Stel'makh NII "Polyus", Moscow, Russia
9.25 Invited paper
Analytical applications of diode lasers.
ힿ I. Nadejzdinskii
Prokhorov Institute of Applied Physics RAS, Moscow, Russia
9.50 Low-coherent light sources of high brightness based on the superposition of radiation of superluminescence diodes.
M. Wojtkovski P. I. Lapin, D. S. ˡmedov, J. G. Fujimoto , S. D. Yakubovich
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, USA
SuperlumDiodes Ltd., Moscow, Russia
10.05 Lifetime tests of superluminescence diodes and light-emitting modules based on them.
P. ힿ Lobintsov, D. S. ˡmedov, S. D. Yakubovich
SuperlumDiodes Ltd., Moscow, Russia
10.20 High-power blue InGaN flip-chip LEDs with reflecting contacts
Lundin W.V., Sakharov A.V., Tsatsulnikov A.F., Onushkin G.A., Zakgeim D.A., Smirnova I.P., Gurevich S.A., Zakgeim A.L., Vasileva E.D., Itkinson G.V.
A.F.Ioffe Physico-Technical Institute RAS
Center for microelectronics in A.F.Ioffe Physico-Technical Institute
ZAO Svetlana-Optoelectronics
10.35 UV light souses grown by HVPE.
A.S. Usikov et al.
TDI Inc., MD, USA

11.0011.30 Coffee Break

11.30 Invited paper
Microchip and mini lasers with intracavity Raman conversion.
V. A. Orlovich, A. S. Grabtchikov, A. A. Demidovich , V. A. Lisinetskii
Stepanov Institute of Physics NASB, Minsk, Belarus
Institute of Molecular and Atomic Physics NASB, Minsk, Belarus
11.55 Invited paper
Solid-state laser with diode pump of the power of 300 W.
I. V. Glukhikh, S. S. Polikarpov, ힿ V. Stepanov, S. V. Frolov
FGUP Efremov NIIEFA, St. Petersburg, Russia
12.20 Invited paper
Modern photo-therapeutic apparatuses and technologies based on application of semiconductor lasers and light-emitting diodes.
V. ힿ ͮstovnikov, G. R. ͮstovnikova, V. Yu. Plavskii , ힿ B. Ryabtsev, I. ힿ Leusenko, ힿ V. ͮstovnikov, N. S. Serdyuchenko, V. S. Ulashik, P. S. Rusakevich, I. ힿ Ruibin, ힿ L. Novakovskii, î ힿ Lositskii
Stepanov Institute of Physics NASB, Minsk, Belarus
Belarussian State Medicine University, Minsk, Belarus
Belarussian Medicine Academy of Postgraduate Education, Minsk, Belarus
ine, Minsk, Belarus
12.35 Reserved.

13.00 Workshop Closing