3rd Belarusian-Russian Workshop
SEMICONDUCTOR LASERS AND SYSTEMS
22-24 June 1999

Minsk, Belarus

Stepanov Institute of Physics, National Academy of Sciences of Belarus
Ioffe Physico-Technical Institute, Russian Academy of Sciences
Belarusian Republican Foundation for Fundamental Research
IEEE Belarus Chapters (LEOS, MTT/ED, CPMT)

PROGRAMME AND ABSTRACTS

1. STP �Laser Technologies of the XXI Century�
V.P. Gribkovskii (Stepanov Institute of Physics, National Academy of Sciences of Belarus),
Zh.I. Alferov (Ioffe Physico-Technical Institute, Russian Academy of Sciences),
P.A. Apanasevich ),
S.S. Sukhno (Executive Committee of the Belarus and Russia Union),
V.I. Nedil'ko (Science and Technology Committee of the Republic of Belarus),
A.S. Rubanov (Belarusian Republican Foundation for Fundamental Research).
2. Lasers on quantum dots: current status and development perspectives (invited).
Zh.I. Alferov (Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia).
3. Theory of threshold characteristics of quantum-dot lasers.
L.V. Asryan, R.A. Suris (Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia).
4. Control of the InAs quantum dots characteristics during molecular beam epitaxy of the laser heterostructures.
V.P. Evtikhiev (Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia).
5. Influence of grain surface on defect formation in laser diode quantum dot active layers.
T.V. Bezyazychnaya, V.V. Gilevskii, G.I. Ryabtsev, V.M. Zelenkovskii (Institute of Physical Organic Chemistry, NASB, Stepanov Institute of Physics, NASB, Minsk, Belarus).
6. On application of powerfull light emitting diodes in optical industry.
A.D. Britov, A.S. Kononov, V.V. Sysun, V.N. Severtsev (MIREA, �Electrolutsh�, �Alfa�, Moscow.)
7. Tunable diode lasers based on 2,7 - 3,7 mm InAsSb/InAsSbP double heterostruture for the spectral range (invited).
Yu.P. Yakovlev (Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia).
8. CW operation of a quantum dot GaAs-based diode laser in the 1.3 mm range.
V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, Yu.M. Shernyakov, D.A. Lifshits, M.V. Maximov, B.V. Volovik, I.S. Tarasov, P.S. Kop�ev, Zh.I. Alferov, N.N. Ledentsov, and D. Bimberg (Ioffe Physico-Technical Institute, St. Petersburg, Russia, Institut fur Festkorperphysik, Technische Universitat, Berlin, Germany).
9. Optimization of the tuning curves for diode lasers in external cavities.
S.V. Nalivko, V.K. Kononenko I.S. Manak (Belarussian State University, Stepanov Institute of Physics, NASB, Minsk, Belarus).
10. High power diode laser emitter with optical axis symmetrical beam.
S.�. Sosnovski, �.P. Surodin, V.V. Kalinina (State Unitary Scientific and Industrial Production Enterprise �INJECT�, Saratov, Russia).
11. Experimental study of optical gain and linewidth enhancement factor in strained quantum well InGaAs/GaAs lasers of 0.94-0.98 mm spectral range.
A.P. Bogatov, A.E. Boltaseva, A.E. Drakin, V.P. Konyaev (Lebedev Physical Institute, RAS, Moscow Physical and Technical Institute, SE SII �Polus�, Moscow, Russia).
12. Radiative characteristics of quantum-well laser structures in the GaAs/GaAlAs system.
V.D. Kurnosov, K.V. Kurnosov (SE SII �Polus�, Lomonosov Moscow State University, Moscow, Russia).
13. 1.55 mm diode lasers with fiber grating Bragg reflector for dense WDM transmission.
S.A. Gurevich, M.S. Shatalov, F.N. Timofeev, P. Byvel (Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia, Department of Electronic and Electrical Engineering, University College, London, UK).
14. Detection of ethanol vapour with near IR diode lasers.
A.G. Berezin, Yu.V. Bugoslavskii, O.V. Ershov, V.G. Kutnyak, A.I. Nadezhdinskii (Natural Sciences Center, General Physics Institute, RAS, Moscow, Russia).
15. Leakage in 1.5 mm InGaAs(P) quantum well lasers.
A.B Walker, J. Watling, A. Adams, E. O�Reilly, S. Sweeney (Department of Physics, University of Bath, Department of Electronics and Electrical Engineering, Glasgow University, Department of Physics, University of Surrey, UK).
16. Lasers for information transmission systems. (invited)
V.P. Duraev (Research Institute �Polus�, Mocsow, Russia).
17. Broad continuous frequency tuning in a diode laser with an external cavity.
I.G. Goncharov, A.P. Grachev, A.J. Beskurnikov (Moscow Engineering Physics Institute, Department of Solid State Physics, Moscow, Russia).
18. Divergence of radiation and obliquity factor for QW heterolaser with a complex waveguide.
A.P. Bogatov, S.A. Luk�yanov, A.V. Ustinov (Lebedev Physical Institute, RAS, Moscow Engineering Physics Institute, Moscow, Russia).
19. LPE separate confinement SQW InGaAsP/GaAs laser heterostructures on 808 nm and results on made of it integral arrays.
E.V. Gratsa, K.D. Vladimirtseva, A.D. Doub, V.G. Volkov (SPC SQE, Branch SE "MICWEL", PA "North", Novosibirsk, Russia).
20. The design construction of laser array employs for liquid cooling the capillary structure.
A.M. Jmud, A.D. Doub, I.P. Sviridenko, V.V. Privezentsev, V.G. Volkov (SPC SQE, Branch SE "MICWEL", PA "North", Novosibirsk, SSC RF Physico-Energy Institute, Obninsk, Russia).
21.The comparison of technical-economic characteristics of high-power laser diodes and integral arrays based on LPE and MOCVD methods.
A.D. Doub, V.G. Volkov, K.D. Vladimirtseva, A.M. Jmud, E.V. Gratsa (SPC SQE, Branch SE "MICWEL", PA "North", Novosibirsk, Russia).
22. Stimulation Raman scaterring in Nd:KGW laser with diode pumping.
A.S. Grabtchikov, A.N. Kuzmin, V.A. Lisinetskii, G.I. Ryabtsev, V.A. Orlovich, A.A. Demidovich (Stepanov Institute of Physics, Institute of Molecular and Atomic Physics, NASB, Minsk, Belarus).
23. GaN development efforts at Hewlett-Packard. (invited)
R.S. Kern (Hewlett-Packard Optoelecronics Division, San Jose, USA).
24. Optically pumped stimulated emission and lasing in GaN epitaxial layers and InGaN/GaN heterostructures grown by MOVPE.
G.P. Yablonskii, E.V. Lutsenko, I.P Marko, V.N. Pavlovskii, V.V. Valach, O. Schon, H. Protmann, M. Lunenburger, M. Heuken, S. Hess, K. Kyhm, R. Taylor, J.F. Ryan, B. Schineller, K. Heime (Stepanov Institute of Physics, NASB, Minsk, Belarus, AIXTRON AG, Aachen, Germany, University of Oxford, Departement of Physics, Claredon Laboratory, UK, Institut fur Halbleitertechnik, RWTH, Aachen, Germany).
25. MQW structures grown by MBE on transparent ZnSe and ZnTe substrates for e-beam pumped semiconductor lasers.
V.I. Kozlovsky, Yu.V. Korostelin, Yu.G. Sadofyev, P.A. Trubenko (Lebedev Physical Institute, RAS, Fiber Optics Research Center, General Physics Institute, RAS, Moscow, Russia).
26. Influence of modulation of the pump current density on the focusing of radiation of semiconductor laser with electron excitation.
O.V. Bogdankevich, E.Yu. Negodin, S.B. Sozinov (Scientific and Inculcational Enterprise "MODUS", RAS, Moscow Engineer-Physical Institute, Moscow, Russia).
27. Efficient control of the divergence diagram of SLEP radiation by change of the density current distribution in pump beam.
O.V. Bogdankevich, V.P. Kuznetsov, S.B. Sozinov (Laboratory of Applied Ecology, RF Ministry of Public Health, Scientific and Inculcational Enterprise "MODUS", RAS, Moscow Engineer-Physical Institute, Moscow, Russia).
28. Factors, that influence on laser properties of zinc oxide.
V.A. Nikitenko, I.V. Pikanov, S.V. Mukhin, I.P. Kuzmina, P.G. Pasko (Moscow State University of Communications, Moscow, Russia).
29. LD-pumped Yb:KYW laser with short crystal.
A.A. Demidovich, A.N. Kuzmin, G.I. Ryabtsev, M.B. Danailov, W. Strek, A.N. Titov (Institute of Molecular and Atomic Physics, NASB, Stepanov Institute of Physics, NASB, Minsk, Belarus, Laboratory for Lasers and Optical Fibres, Sincrotrone-Trieste, Italy, Institute for Low Temperature and Structure Research, PAS, Wroclaw, Poland, Vavilov State Optical Institute, St. Petersburg, Russia).
30. Electron beam pumped semiconductor laser array with optically coupled elements.
M.M. Zverev, A.N. Kolomyjsky, D.V. Peregudov (MIREA, Moscow, TRINITI, Troitsk, Russia).
31. Achievements and problems in physics of streamer lasers. (invited)
V.P. Gribkovskii, V.V. Parashchuk, K.T. Rusakov (Stepanov Institute of Physics, NASB, Minsk, Belarus).
32. InAsSbP/In(Ga)As(Sb) Diode Lasers and LEDs for mid-IR.
M. Aidaraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyj, N.M. Stus, G.N. Talalakin. (Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia).
33. High-speed photodetector modules for fiber-optical communication.laser systems.
V.F. Andrievskii, S.A. Malyshev, A.L. Chij (Institute of Electronics, NASB, Minsk, Belarus).
34.Receiver-transmitter device of bit-rate cable-TV fiber-optical system.
Ja.V. Alishev, N.V. Urjadov (Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus).
35. Effective technological methods of thin-film coatings for the fit of crystals onto cooled substrates.
A.P. Dostanko, V.V. Basranov, B.F. Kholenkov (Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus).
36. Laser diodes in the bit printing based on the photosensitive effect.
S.N. Maksimovskii, A.D. Britov, A.S. Kononov (Lebedev Physical Institute, RAS, MIREA, Moscow, Russia).
37. Optimization of diode pump for solid-state slab lasers.
L.N. Orlov, G.I. Jeltov, V.V. Jukovskii (Stepanov Institute of Physics, NASB, Institute of Molecular and Atomic Physics, NASB, Minsk, Belarus).
38. Influence of gain and recombination nonlinearities on long-wavelength laser diode modulation.
L.I. Burov, S.V. Voitikov, V.P. Gribkovskii, V.I. Kramar, G.I. Ryabtsev, K.A. Shore (Belarusian State University, Stepanov Institute of Physics, NASB, Minsk, Belarus, University of Wales, Bangor, UK).
39. Laser heterostructures as optoelectronic sensors.
A.A. Ptashchenko, F.A. Ptashchenko (Mechnikov Odessa State University, Odessa, Ukraine).
40. Semiconductor lasers with extremely broad tuning range by using asymmetric dual quantum wells.
Ching-Fuh Lin, Bor-Lin Lee, Miin-Jang Chen (Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC).
41. Heat process modelling for laser diode-diamond substrate system and problems of technology.
V.P . Gribkovskii, L.E. Batay, A.K. Belyaeva, L.A. Kotomtseva, A.N. Kuzmin, N.A. Loiko, N.K. Nikeenko, V.V. Parashchuk, G.I. Ryabtsev (Stepanov Institute of Physics, NASB, Minsk, Belarus).

Common Discussion.